| PART |
Description |
Maker |
| TPR1000 |
Transponder/ 1090 MHz, Class C, Common Base, Pulsed; P(out) (W): 1000; P(in) (W): 250; Gain (dB): 6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55KV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz
high power COMMON BASE bipolar transistor.
|
Microsemi, Corp.
ETC[ETC]
GHZTECH[GHz Technology]
List of Unclassifed Manufacturers
|
| M57917L |
HYBRID IC FOR DRIVING TRANSISTOR MODULES
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M57951L |
HYBRID IC FOR DRIVING TRANSISTOR MODULES
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| ZXTN10150DZ |
150V NPN LED DRIVING TRANSISTOR
|
DIODES
|
| ZXTN4006Z ZXTN4006ZTA ZXTN4006Z-15 |
200V NPN LED DRIVING TRANSISTOR IN SOT89
|
Diodes Incorporated
|
| ZXTN4004Z-15 |
150V NPN LED DRIVING TRANSISTOR IN SOT89
|
Diodes Incorporated
|
| BCP54-10 BCP56-10 BCP56 |
NPN Medium Power Transistor
High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BDX63A BDX63C BDX63 BDX63B |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| 2N6261 |
HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
